Dicle Üniversitesi Fen Bilimleri Enstitüsü Dergisi

Yazarlar: M BENHALİLİBA, Ys OCAK, H MOKHTARİ, Ce BENOUİS, Ms AİDA

Konular:-

DOI:10.1007/s10971-010-2258-x.

Anahtar Kelimeler:Ultrasonik Püskürtme Proliz,ZnO film,I-V karakteristiği,Karanlık ve Aydınlık Pozlama,Doğrultma özelliği

Özet: Microelectronics properties of Al/ZnO/p-Si/Al Schottky diode have been investigated. ZnO films have grown onto p type silicon substrate by ultrasonic spray pyrolysis @ 350°C. Al front contacts have been deposited by thermal evaporation process in vacuum at 10-6 Torr. The current-voltage I-V characteristics show a good rectifying profile around 1900. The extracted parameters in dark and light 150 mW/cm² conditions: ideality factor n , barrier height ΦB, series resistance Rs are respectively found to be 3.5 and 1.6, 0.74 eV and 0.89 eV, 5 kΩ and 1.6 kΩ, respectively. Effect of temperature, varied within the range of 22-107 ° C, on the I-V characteristics was emphasized. Dark and illumination characteristics were also studied. Finally, we accomplished the study by the measurement of capacitance-voltage C-V characteristics as a result of frequency.

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