Algerian Journal of Signals and Systems

Yazarlar: Ali HOUADEF, Boualem DJEZZAR

Konular:-

DOI:10.51485/ajss.v6i1.2

Anahtar Kelimeler:LDMOS,Hot Carrier Stress,LOCOS,Flicker noise

Özet: Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA. The n-type transistor uses the LOCOS (local oxidation of silicon) and single RESURF (reduced surface field) features. Using the trap degradation model, degradation over time and different biases, the shift of threshold voltage VTH, ON-state resistance RON, saturation current IDsat, and device lifetime are extracted. The shifts were found to be manageable, they have a single process mechanism and are due to hot electrons in our case. But, flicker noise assessment under the same stress shows noticeable instabilities.

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