Algerian Journal of Signals and Systems
Impact of NBTI Stress on VDMOSFET Regions
Yazarlar: Sidi Mohammed Merah, Bouchra Nadji
Cilt 3 , Sayı 2 , 2018 , Sayfalar 65-69
Konular:-
DOI:10.51485/ajss.v3i2.60
Anahtar Kelimeler:VDMOSFET regions,C-V,NBTI
Özet: In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.
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BibTex
KOPYALA
@article{2018, title={Impact of NBTI Stress on VDMOSFET Regions}, volume={3}, number={65–69}, publisher={Algerian Journal of Signals and Systems}, author={Sidi Mohammed Merah, Bouchra Nadji}, year={2018} }
APA
KOPYALA
Sidi Mohammed Merah, Bouchra Nadji. (2018). Impact of NBTI Stress on VDMOSFET Regions (Vol. 3). Vol. 3. Algerian Journal of Signals and Systems.
MLA
KOPYALA
Sidi Mohammed Merah, Bouchra Nadji. Impact of NBTI Stress on VDMOSFET Regions. no. 65–69, Algerian Journal of Signals and Systems, 2018.