MATI

MATI

Topological Characterization of Silicon Carbide Structures

Yazarlar: İdris Çiftçi

Cilt 2 , Sayı 2 , 2020 , Sayfalar 12-23

Konular:-

Anahtar Kelimeler:Ev-degree topological indices, Ve-degree topological indices, Silicon carbide structures

Özet: Topological indices enable information about the underlying topology of chemical and physical substances. Topological indices are grouped into two categories; degree based and distance based. Degree based topological indices are defined by using classical degree concept in graph theory. Ev-degree and ve-degree which have been defined recently are two novel degree concepts in graph theory. Also Ev-degre and ve-degree based topological indices have been defined as parallel to corresponding classical degree based topological indices. Molecular classical degree based topological properties of silicon carbon structures have been investigated recently. In this study we investigate ev-degree and ve-degree molecular topological properties of two silicon carbon structures ofSi2C3-I and of Si2C3-11.


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BibTex
KOPYALA
@article{2020, title={Topological Characterization of Silicon Carbide Structures}, volume={2}, number={12–23}, publisher={MATI}, author={İdris Çiftçi}, year={2020} }
APA
KOPYALA
İdris Çiftçi. (2020). Topological Characterization of Silicon Carbide Structures (Vol. 2). Vol. 2. MATI.
MLA
KOPYALA
İdris Çiftçi. Topological Characterization of Silicon Carbide Structures. no. 12–23, MATI, 2020.