Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi

Yazarlar: İbrahim KARTERİ

Konular:Mühendislik, Elektrik ve Elektronik

DOI:10.28948/ngumuh.341185

Anahtar Kelimeler:RGO,MOS capacitor,Capacitance and conductance measurements,Dielectric properties

Özet:    In this study, the frequency dependence of the dielectric properties of Au/RGO/p-Si metal-oxide-semiconductor (MOS) capacitor with silicon nitride (RGO) interfacial oxide layer have been investigated by taking experimental capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at 200, 300, 500 and 700 kHz frequencies. Dielectric constant (ε'), dielectric loss (ε"), dielectric loss tangent (tanδ), ac electrical conductivity (σac), real and imaginary part of electric modulus (Μ' and M") values of the MOS capacitor have been determined in the frequency range of 10 kHz-1 MHz. The obtained results clearly show that the dielectric parameters are frequency dependent. The values of the ε' and ε'' decrease with increasing frequency. But the values of the σac, Μ' and Μ" increase with increasing frequency.

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