Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi

Yazarlar: Özkan BAYRAM, Erdal İĞMAN, Önder ŞİMŞEK

Konular:Malzeme Bilimleri, Ortak Disiplinler

DOI:10.28948/ngumuh.598128

Anahtar Kelimeler:PECVD,CVD,Graphene,Thin Film

Özet:      In this study, it was aimed to synthesize graphene thin films on copper foils using CH4 gas. Plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) method were used to obtain thin films. Copper foils were placed in quartz reactor chamber after standard pre-cleaning. Then, the base pressure of the vacuum chamber was lowered to 5-10 mTorr. The foils was annealed with hydrogen gas and CH4 gas was sent to the chamber by means of gas flow controller. In PECVD system;  RF power supply (13.56 MHz) was activated by the control unit and the plasma was be formed with generated energy. The deposition pressure was set to 100 mTorr,  substrate temperature was 600 ˚C, RF power was 50 W and deposition time was 20 minutes. In the CVD technique, the RF power was eliminated and the deposition temperature was determined as 1000 ˚C. Raman, SEM and TEM analysis were performed for the characterization of the obtained graphene nanostructures. According to the results of Raman, the thin film obtained by the CVD method confirmed the single-layer graphene. However, single-layer graphene could not be obtained by PECVD technique.  

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