Journal La Multiapp

Journal La Multiapp

Simulation of Energy Bands for Metal and Semiconductor Junction

Yazarlar: Wut Hmone Kyaw, May Nwe Myint Aye

Cilt 1 , Sayı 2 , 2020 , Sayfalar 7-13

Konular:-

DOI:10.37899/journallamultiapp.v1i2.107

Anahtar Kelimeler:MOSFET,Band structure,Gallium nitride,Metal-semiconductor

Özet: This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.

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@article{2020, title={Simulation of Energy Bands for Metal and Semiconductor Junction}, volume={1}, number={7–13}, publisher={Journal La Multiapp}, author={Wut Hmone Kyaw, May Nwe Myint Aye}, year={2020} }
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Wut Hmone Kyaw, May Nwe Myint Aye. (2020). Simulation of Energy Bands for Metal and Semiconductor Junction (Vol. 1). Vol. 1. Journal La Multiapp.
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Wut Hmone Kyaw, May Nwe Myint Aye. Simulation of Energy Bands for Metal and Semiconductor Junction. no. 7–13, Journal La Multiapp, 2020.
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